kia semiconductors 50 amps, 60 volts n - channel mosfet ? 13641469108 qq:543158798 50N06 1.description the kia50N06 is three - terminal silicon device with cu rrent conduction capability of about 50a, fast switching speed. low on - state resistance, breakdown voltage rating of 60v, and max threshold voltages of 4 volt. it is mainly suitable el ectronic ballast, and low power switching 2. features r ds(on) = 23m ? @v gs =10v. ultra low gate charge (typical 30nc) low reverse transfer capacitance fast switching capability 100 avalanc he energy specified improved dv/dt capability 3. pin configuration pin 1 2 3 function gate drain source 1 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 6. absolute maximum ratings symbolvalueunit v dss 60v v gss 20v t j =25 oci d 50a continuous drain current t j =100 oci d 35a drain current pulsed (note1)i dm 200a single pulsed avalanche energy (note2)e as 480mj repetitive avalanche energy (note1)e ar 13mj peak diode recovery dv/dt (note3)dv/dt7v/ns total power di ssipation(t j =25 oc)p d 130w derating factor above 25 ocp d 0.9w/ oc operating junction temperaturet j - 55 ~ +150oc storage temperaturet stg - 55 ~ +150oc note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. parameter drain to source voltage gate to source voltage 3. thermal resistance parameter thermal resistance, junction - to - case thermal resistance,case - to - sink thermal resistance,junction - to - ambient symbol jc cs ja typ 0.5 62.5 max 1.15 units oc/w oc/w oc/w 2 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosf et 50N06 7. electrical characteristics (t j = 25c,unless otherwise notes) test conditionsmintypmaxunit v gs =0v,i d =250a i d =250a, referenced to 25 oc v ds =60v,v gs =0v v ds =48v,t c =125 oc v gs =20v,v ds =0v v gs = - 20v,v ds =0v v ds = v gs , i d =250a v gs =10v,i d = 25a 60 0.07 1 1 100 - 100 2.0 18 900 430 80 40 100 90 80 30 9.6 10 4.0 23 1220 550 100 60 200 180 160 40 v v/oc a a na na v m ? pf pf pf ns ns ns ns nc nc nc v a parameter off characteristics drain - source breakdown voltage breakdown voltage temperature coefficient drain - source leakage current symbol bv dss bv dss /t j i dss gate - source leakage current i gss gate - source leakage reverse on characteristics gate threshold voltagev gs(th) static drain - source on - state r ds(on) resistance dynamic characteristi cs input capacitancec iss output capacitancec oss reverse transfer capacitancec rss switching characteristics turn - on delay timet d(on) rise timet r turn - off delay timet d(off) fall timet f total gate chargeq g gate - source chargeq gs gate - drain charge (miller charg e)q gd source - drain diode ratings and characteristics diode forward voltagev sd continuous source current i s v ds =25v,v gs =0v,f=1mhz v dd =30v,i d = 25a,r g =50 ? (note4,5) v ds =48v,v gs =10v ,i d = 50a (note4,5) v gs =0v,i s = 50a integral reverse p - n junction diode in the mosfet 1.5 50 pulsed s ource current i sm 54 81 200 a ns c reverse recovery timet rr v gs =0v,i s = 50a di f /dt= 100a/s(note4)reverse recovery chargeq rr note:1. repetitive rating:pulse width limited by junction temperature 2.l=5.6mh,i as = 50a,v dd =25v,r g =0 ? ,sta ring t j =25oc 3.i sd < 50a,di/dt< 300a/s,v dd kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 8.test circuits and waveforms 4 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 5 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 6 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 9.typical characteristics 7 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 8 of 9 free datasheet http:///
kia semiconductors 50 amps, 60 volts n - channel mosfet 50N06 9 of 9 free datasheet http:///
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